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STA-OPTS Optoelectronic Detection System
The STA-OPTS optoelectronic detection system is mainly used in fields like physics, materials science, and semiconductor materials. It can test optoelectronic detectors, photovoltaic cells, semiconductor thin-film devices, and more.
Its functions include a full set of tests such as IV characteristics, IT scanning, photocurrent, optical power, responsivity, quantum efficiency, photoresponse time, (ultra) low-frequency noise, output and transfer characteristics, and 3dB bandwidth. By collecting data like device dark/light current and response time, it intuitively reflects device defects and material internal composition, providing a complete experimental basis for optimizing material components, device structure design, and improving fabrication processes.
The system includes a vibration-isolated optical platform, light sources, monochromator, microscope, current amplifier, data acquisition unit, testing software, and a computer control terminal.
Currently, the STA-OPTS optoelectronic detection system has been applied in research institutions and universities such as Tsinghua University, Nanjing University, Harbin Institute of Technology, Dalian University of Technology, Changchun Institute of Applied Chemistry, Changchun University of Science and Technology, Jiangnan University, Henan Normal University, Southwest University, Xiamen University, Ningbo University, Nanhua University, and Heilongjiang University.
Features
fA-level current testing capability with excellent shielding, reducing external electromagnetic interference;
Automatically sets the incident monochromatic wavelength, accurately scans dark current and photocurrent curves;
Repeat function allows simultaneous measurement and display of curves under different conditions;
I(R)-T testing to characterize current changes over time at fixed bias;
Dual Y-axis pulse I-V to show dynamic current changes at different voltages;
Supports saving both image (bmp) and data (xls) formats simultaneously;
True 1/f noise testing and analysis to reveal defect effects on current dynamics;
Ultra-low noise below 2×10-29 A²/Hz (or 1×10-31 A²/Hz), easily testing nA-level (or pA-level) current noise;
One-key switch between DC and AC, physically removing DC components’ effect on 1/f curves;
Dynamic averaging visualization with RMS, Vector, and Peak processing, up to 500 averages;
Power signal generator to modulate laser diodes, current rise time under 50ns for fast optical switching;
Multiple selectable current amplifier modules, maximum photocurrent response time under 100ns;
Online selection of time-domain data, automatic fitting and one-key display of 3dB bandwidth;
Online bad pixel deletion feature to make curve trends clearer.
Application
Materials Science
Physics
Sensors
Photovoltaic Devices
Research directions in perovskite and other semiconductor materials
Specification
| Frequency Band | 300-2500nm |
| Spectral Resolution | 1nm |
| Bias Voltage Range | ±10V |
| Current Resolution | <10fA |
| Data Sampling Rate | 2M/S |
| High-speed Current Gain | 103～1011 |
| Low-speed Current Gain | 102～1014 |
| System Current Baseline Noise | 2×10-29A2/Hz (Low Frequency) 1×10-31A2/Hz (Ultra-low Frequency) |
| Low-frequency Noise Range | 1Hz-100KHz |
| Ultra-low Frequency Noise Range | 0.01Hz-10Hz |
| Datasheet |  |
Measurement
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Changchun New Industries Optoelectronics Technology Co., Ltd.
Address: No. 888 Jinhu Road, High-Tech Zone, Changchun, 130103, P.R.China
International Tel:+86-431-85603799
Email: sales@cnilaser.com
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